| PART |
Description |
Maker |
| CGD1042H09 |
1 GHz, 23 dB gain high output power doubler
1 GHz, 23 dB gain high output power doubler
|
NXP Semiconductors
|
| LD7126 LD7126SERIES |
DBS-Band, 2.0KW/2.4KW Klystrons for Communications
17 GHz BAND, 2.0 kW/2.4 kW, HIGH EFFICIENCY, HIGH POWER GAIN
17 GHz BAND / 2.0 kW/2.4 kW / HIGH EFFICIENCY / HIGH POWER GAIN
|
NEC[NEC]
NEC Corp.
|
| Q62702-G0041 BGA310 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 9 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz 3 dB-bandwidth: DC to 2.4 GHz)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| BGA310 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 9 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz 3 dB-bandwidth: DC to 2.4 GHz)
|
Siemens Semiconductor Group
|
| CGD1046HI |
1 GHz, 27 dB gain GaAs high output power doubler 40 MHz - 1003 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
|
NXP Semiconductors N.V.
|
| LD7202W LD7202 LD7202A LD7202B LD7202L |
14 GHz, 600 W CW, PPM FOCUSING, HIGH POWER GAIN 14千兆赫，600 W连续，分之为重点，高功率增益
14 GHz / 600 W CW / PPM FOCUSING / HIGH POWER GAIN
|
NEC Corp.
NEC, Corp.
NEC[NEC]
|
| SST12LF02 SST12LF02-QXCE |
2.4 GHz High-Gain, High-Efficiency Front-end Module Cordless phones
|
Microchip Technology
|
| RFMA1214-1W-Q7 |
12.50 - 14.50 GHz High-Gain Surface Mounted PA
|
Excelics Semiconductor, Inc.
|
| RFMA0912-1W-Q7 |
9.50 - 11.70 GHz High-Gain Surface Mounted PA
|
Excelics Semiconductor, Inc.
|
| AMMP-5620-BLKG AMMP-5620-TR1G AMMP-562013 AMMP-562 |
6 ?20 GHz High Gain Amplifier in SMT Package
|
AVAGO TECHNOLOGIES LIMITED
|
